HALF-BRIDGE DRIVER VOFFSET 600V max IO+/-130 mA / 270 mA (گیت درایور) ماسفت درایور نیم پل 600 ولت 270 میلی امپری
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Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Internally set deadtime
• High side output in phase with input
• Shut down input turns off both channels
• Matched propagation delay for both channels
• Also available LEAD-FREE
Description
The IR2104(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates from 10 to 600 volts.
HEXFET® Power MOSFET, N CHANNEL POWER MOSFET, 55V, 53A, TO-220AB ماسفت قدرت 55 ولت 35 آمپر IR فیلیپین RDS(on) = 16.5mΩ
ای سی تک ورودی تاچ،کلید لمسی تکی،کلید لمسی مجاورتی با قابلیت تشخیص دست انسان تا فاصله 12 میل متر با روکش شیشه و فاصله 6 میلی متر با روکش پلاستیک The AT42QT1010 is a digital burst mode charge-transfer sensor that is capable of detecting near proximity or touch, making it ideal for implementing touch controls.
مقاومت کربنی22 کیلو اهم 1/4 وات با تلرانس 5 درصد - چهار رنگ 0.25w Axial resistor
ترانزیستور NPN ولتاژ300 ولت 0.5 آمپر 0.5A 300V, POWER TRANSISTORS NPN SILICON TO-126
