ترانزیستور دارلینگتون NPN ولتاژ120- ولت 20- آمپر Silicon PNP Darlington Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min.)
·High DC Current Gain-
: hFE= 750(Min.)@IC= -10A
·Low Collector Saturation Voltage-
: VCE (sat)= -3.0V(Max.)@ IC= -20A
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use as output devices in complementary
general purpose amplifier applications
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