AT45DB321D-SU اورجینال

نقد و بررسی اجمالی

ای سی حافظه 32 مگابیت ، 4 مگابایت 32Mb DataFlash اورجینال

 دریافت دیتا شیت

Features

 Single 2.5V - 3.6V or 2.7V - 3.6V supply ●

 RapidS™ serial interface: 66MHz maximum clock frequency ●

SPI compatible modes 0 and 3 ●

User configurable page size ●

512 bytes per page ● 528 bytes per page ●

Page size can be factory preconfigured for 512 bytes ●

Page program operation ●

Intelligent programming operation ●

8,192 pages (512/528 bytes/page) main memory ●

Flexible erase options ●

(Page erase (512 bytes ●

(Block erase (4KB ●

(Sector erase (64KB ●

(Chip erase (32Mb ●

(Two SRAM data buffers (512/528 bytes ●

Allows receiving data while reprogramming the flash array ●

Continuous read capability through entire array ●

Ideal for code shadowing applications ●

Low power dissipation ●

7mA active read current ,typical ●

25µA standby current, typical ●

15µA deep power down, typical ●

Hardware and software data protection features ●

Individual sector ●

Sector lockdown for secure code and data storage ●

Individual sector ●

Security: 128-byte security register ●

64-byte user programmable space ●

Unique 64-byte device identifier ●

JEDEC standard manufacturer and device ID read ●

100,000 program/erase cycles per page, minimum ●

Data retention: 20 years ●

Industrial temperature range ●

Green (Pb/halide-free/RoHS compliant) packaging options ● 

Description

The AT45DB321D is a 2.5V or 2.7V, serial interface, sequential access flash memory ideally suited for a wide variety of digital voice-, image-, program code-, and data-storage applications. The AT45DB321D supports the RapidS serial interface for applications requiring very high speed operations. The RapidS serial interface is SPI compatible for frequencies up to 66MHz. The 34,603,008-bits of memory are organized as 8,192 pages of 512 bytes or 528 bytes each. In addition to the main memory, the AT45DB321D also contains two SRAM buffers of 512/528 bytes each. These buffers allow the receiving of data while a page in the main memory is being reprogrammed, as well as the writing of a continuous data stream. EEPROM (electrically erasable and programmable read-only memory) emulation (bit or byte alterability) is easily handled with a self-contained, three-step read-modify-write operation. Unlike conventional flash memories, which are accessed randomly with multiple address lines and a parallel interface, DataFlash® devices use a RapidS serial interface to sequentially access its data. The simple sequential access dramatically reduces active pin count, facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size. The device is optimized for use in many commercial and industrial applications where high density, low pin count, low voltage and low power are essential. To allow for simple, in-system reprogrammability, the AT45DB321D does not require high input voltages for programming. The device operates from a single power supply, 2.7V to 3.6V, for both the program and read operations. The AT45DB321D is enabled through the chip select pin (CS) and accessed via a three-wire interface consisting of the serial input (SI), serial output (SO), and serial clock (SCK) lines