HALF-BRIDGE DRIVER VOFFSET 600V max IO+/-130 mA / 270 mA (گیت درایور) ماسفت درایور نیم پل 600 ولت 270 میلی امپری
استفاده در اکثر صنایع از جمله
اینورتر سازی
دستگاه جوش
محافظ و سوئیچینگ ها
مخابراتی و ...
Features
• Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Internally set deadtime
• High side output in phase with input
• Shut down input turns off both channels
• Matched propagation delay for both channels
• Also available LEAD-FREE
Description
The IR2104(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates from 10 to 600 volts.
مقاومت اس ام دی 5 درصد پکیج 0805 - SMD RESISTOR 8.2 مگا اهم 0805 تلرانس 5 درصد
پتانسیومتر 500 اهم خوابیده / POT 500 OHM / WH06-2C-500
ولوم تک (3 پایه) 5 کیلو اهم فلزی / B5 K-20MM
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 900V,5A MOSFET,TO-3P ماسفت قدرت 900 ولت 5 آمپر توشیبا ژاپن DC−DC Converter, Relay Drive and Motor Drive Applications