IRF530N اورجینال - کیفیت بالا

نقد و بررسی اجمالی

MOSFET N-CH 100V 17A TO220AB HEXFET Power MOSFET ماسفت قدرت 100 ولت 17 آمپر RDS(on) = 90mΩ

دریافت  کتابخانه( ALITUM  DESIGNER )

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry