2ED020I12-FI اورجینال -کیفیت بالا

نقد و بررسی اجمالی

Dual IGBT Driver IC-Power supply operating range from 14 to 18 V-Gate drive currents of +1 A / –2 A درایور ای جی بی تی دوبل 1 یا -2 آمپر ایزولاسیون 1200 ولت

Dual IGBT Driver IC
2ED020I12-FI
Product Highlights
•Fully operational to ±1.2 kV
•Power supply operating range from 14 to 18 V
•Gate drive currents of +1 A / –2 A
•Matched propagation delay for both channels
•High dV/dt immunity
•Low power consumption
•General purpose operational amplifier
•General purpose comparator

Features
•Floating high side driver
•Undervoltage lockout for both channels
•3.3V and 5 V TTL compatible inputs
•CMOS Schmitt-triggered inputs with pull-down
•Non-inverting inputs
•Interlocking inputs
•Dedicated shutdown input with pull-up
•RoHS compliant

Overview
The 2ED020I12-FI is a high voltage, high speed power MOSFET and IGBT driver with interlocking high and low side referenced outputs. The floating high side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver the 2ED020I12-FI is equipped with a dedicated shutdown input. All logic inputs are compatible with 3.3 V and 5 V TTL. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. Both drivers are designed to drive an N-channel power MOSFET or IGBT which operate up to 1.2 kV. In addition, a general purpose operational amplifier and a general purpose comparator are provided which may be used for instance for current measurement or overcurrent detection.