ای سی حافظه نند فلش 1گیگابیت/128 مگابایت 128M x 8 Bit NAND Flash Memory اورجینال
FEATURES
Voltage Supply - 3.3V Device(K9F1G08U0C) : 2.7V ~ 3.6V •
Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64) x 8bit •
Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte •
(Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 25µs(Max.) - Serial Access : 25ns(Min •
(Fast Write Cycle Time - Page Program time : 200µs(Typ.) - Block Erase Time : 1.5ms(Typ •
Command/Address/Data Multiplexed I/O Port •
Hardware Data Protection - Program/Erase Lockout During Power Transitions •
Reliable CMOS Floating-Gate Technology -Endurance : TBD Program/Erase Cycles(with 1bit/512Byte ECC) - Data Retention : TBD •
Command Driven Operation •
Intelligent Copy-Back with internal 1bit/528Byte EDC •
Unique ID for Copyright Protection •
(K9F1G08U0C-PCB0/PIB0 : Pb-FREE PACKAGE 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch •
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